A silicon-polymer heterostructure for sensor applications

AUTOR(ES)

Laranjeira, J. M. G., Khoury, H. J., Azevedo, W. M. de, Vasconcelos, E. A. de, Silva Jr., E. F. da

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2002-06

RESUMO

We report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin films 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at ± 1.0 Volt bias. The devices are very sensitive to gamma-radiation up to 6,000 Gy and to gas moistures such ammonia, nitric acid and trichloroethylene. The sensitivity of the diodes is observed through shifts of the current-voltage (I-V) curves which can be easily monitored to provide a calibration curve of the sensor either as a radiation dosimeter or as a gas sensor for use in applications in environments demanding gas monitoring or radiation dosimetry.

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