Contribution of the charge image potential to carrier confinement in graded Si-based quantum wells
AUTOR(ES)
Pereira, T. A. S., Caetano, E. W. S., Freire, J. A. K., Freire, V. N., Farias, G. A.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2004-06
RESUMO
In order to analyze the charging effects on electronic spectrum of Silicon (Si) based quantum wells (QW's), we use a method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results shows that the confined electron ground state energy level can be shifted by more than 50 meV due to the contribution of the image charges to the confinement potential of the graded quantum well.
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