Dinamica de portadores e fonons quentes no GaAs

AUTOR(ES)
DATA DE PUBLICAÇÃO

1995

RESUMO

We develop a theoretical model for the electronic thermal relaxation in GaAs crystals submitted to ultrashort optical pulses. We give special consideration to the LO phonons, which are treated by means of two distinct approaches in order to provide a better insight of their dynamical characteristics. As a result, it is possible to follow, step by step, the time evolution of hot carriers and nonequilibrium phonons, since their generation until their thermalization. We observe what is termed a phonon temperature and it is proposed a new mechanism capable to account for its occurrence

ASSUNTO(S)

termodinamica de sistemas em não-equilibrio semicondutores fonons

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