Electron mobility in nitride materials

AUTOR(ES)

Rodrigues, Clóves G., Freire, Valder N., Vasconcellos, Áurea R., Luzzi, Roberto

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2002-06

RESUMO

We contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN.

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