Ionizing radiation and hot carrier effects in SiC MOS devices

AUTOR(ES)

Vasconcelos, E. A. de, Silva Jr., E. F. da, Katsube, T., Yoshida, S.

FONTE

Brazilian Journal of Physics

DATA DE PUBLICAÇÃO

2002-06

RESUMO

We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC conduction band associated with oxide traps.

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