Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

AUTOR(ES)

Oliveira, Felipe Souza, Favero, Ana Carolina, Renosto, Sergio Tuan, Luz, Mário Sérgio da, Santos, Carlos Alberto Moreira dos

FONTE

Mat. Res.

DATA DE PUBLICAÇÃO

03/05/2018

RESUMO

The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.

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