Radiation-induced errors in memory chips
AUTOR(ES)
Peterson, R. J.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2003-06
RESUMO
We have measured probabilities for proton, neutron and pion beams from accelerators to induce temporary or soft errors in a wide range of modern 16 Mb and 64 Mb DRAM memory chips, typical of those used in aircraft electronics. Relations among the cross sections for these particles are deduced. Measurement of alpha particle yields from pions on aluminum, as a surrogate for silicon, indicate that these reaction products are the proximate cause of the charge deposition resulting in errors.
