Titanium impurities in silicon, diamond, and silicon carbide
AUTOR(ES)
Assali, L. V. C., Machado, W. V. M., Justo, J. F.
FONTE
Brazilian Journal of Physics
DATA DE PUBLICAÇÃO
2004-06
RESUMO
We carried a theoretical investigation on the electronic and structural properties of titanium impurities in silicon, diamond, and silicon carbide. The calculations were performed using the spin-polarized full-potential linearized augmented plane wave method in the supercell approach. The atomic configurations and transition and formation energies of isolated Ti impurities were computed.
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