Contact Resistivity
Mostrando 1-9 de 9 artigos, teses e dissertações.
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1. Differences in soil electrical resistivity tomography due to soil water contents in an integrated agricultural system
Resumo: O objetivo deste trabalho foi caracterizar a variabilidade espacial da resistividade elétrica do solo devido a diferentes umidades do solo, em sistema agropecuário integrado. A resistividade elétrica (RE) do solo foi medida com o sensor de contato “Automatic Resistivity Profiling” (ARP) em duas datas, em 2016, em área de 9,7 ha com diferentes
Pesq. agropec. bras.. Publicado em: 28/11/2019
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2. Survey and study of graphite occurrences in the Aracoiába-Baturité graphite bearing District, CE / Levantamento e estudo das ocorrências de grafita do Distrito Grafitífero Aracoiába-Baturité, CE
The Aracoiába-Baturité Graphite-bearing District has graphitic gneiss deposits (disseminated ore) and vein (solid ore) with different genetic origins and their own physical characteristics and geological environments. The graphite gneiss ore is of sedimentary, syngenetic origin, with 1.5% to 8% C content, which is distributed along two long parallel belts,
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 23/03/2011
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3. Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
This work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the
Materials Research. Publicado em: 2009-03
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4. Desenvolvimento de filmes finos de óxidos condutores e transparentes de ZnO para aplicação em células solares
In this work, transparent and conducting undoped zinc oxide (ZnO) thin films were developed with transmittance and electrical resistivity appropriate for application as frontal contact in solar cells. Because of their chemical stability, good electro-optical properties, large band gap, abundance in nature and low toxicity, the ZnO films have emerged as one o
Publicado em: 2007
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5. Electrical and morphological properties of low resistivity Mo thin films prepared by magnetron sputtering
Mo thin films have been deposited using a DC magnetron sputtering system with an S-gun configuration electrode and characterized electrically and morphologically. The influence of the sputtering gas pressure and glow discharge (GD) power, on the electrical resistivity of Mo thin films and on the contact resistivity of Mo to Cu(In,Ga)Se2 (CIGS) films was dete
Brazilian Journal of Physics. Publicado em: 2006-09
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6. Synthesis and characterization of highly transparent and conductive SnO2:F and In2O3:Sn thin films deposited by spray pyrolysis
Highly transparent and conductive thin films of SnO2:F and In2O3:Sn (ITO) have been prepared on glass substrates using the simple pyrolitic (spray) method. Through an exhaustive parameter study and using as diagnostic method for the film quality a figure of merit defined as a function of both, the transmittance and the electric resistivity, the conditions to
Brazilian Journal of Physics. Publicado em: 2006-09
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7. Caracterização elétrica de contatos rasos de siliceto de níquel sobre junções N+P. / Electrical characterization of nickel-silicide shallow contacts on N+P junctions.
This work presents the fabrication and electrical characterization of Al/Ti/Ni(Pt)Si contacts having the nickel monosilicide formed from Ni(30nm)/Pt(1.5nm)/Si structure on shallow N+P junctions with about 0.2 ìm of depth. The diodes? electrical behavior achieved at the best process was considered good, with the following average and standard deviations: are
Publicado em: 2006
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8. Estruturas de barreira dupla de PbTe/PbEuTe crescidas por epitaxia de feixe molecular / PbTe/PbEuTe double barrier structures grown by molecular beam epitaxy
This work reports the growth of PbTe/Pb(1-x)Eu(x)Te double barrier (DB) structures by molecular beam epitaxial and the device processing aiming the resonant tunneling measurement. The samples were grown on (111) BaF(2) substrates at 300°C. Resistivity and Hall effect measurements were performed on reference films to determine the most suitable electrical pr
Publicado em: 2006
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9. Projeto de fabricação de HBTs
A process was established for the fabrication in laboratory of Heterojunction Bipolar Transistors (HBTs) with the AIGaAs/GaAs system. The work consisted basically of the study of elementary processing steps. A mask set was designed including devices in different sizes and test structures. With this mask set, the processing steps for HBT fabrication were stud
Publicado em: 1999