Lande G Factor
Mostrando 1-7 de 7 artigos, teses e dissertações.
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1. Magnetotransport in double and triple quantum wells with different Landé g factor / Magnetotransporte em poços-quânticos duplos e triplos com diferentes valores do fator g de Landé
Neste trabalho, apresentamos estudos sobre o transporte eletrônico de cargas e diagramas de fase no plano ns-B em bicamadas eletrônicas ou poços quânticos duplos, formados de ligas semiconductoras de AlxGa1-xAs e GaAs, assim como também em poços quânticos triplos de GaAs. Para esta finalidade, amostras de poços duplos com diferentes concentrações d
Publicado em: 2009
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2. Efeitos de spin em poços quânticos largos / Study of Landé G factor on single and double quantum wells of AlGaAs
In this work we presents the results of our investigations concerning MBE grown AlGaAs/GaAs single and double quantum well samples. We focused on the variation of the Land´e g factor along the structure of the quantum wells, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The electronic distribution on the wells and the
Publicado em: 2007
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3. Decoherence and relaxation time in an ensemble of quantum dots / Tempos de relaxação e decoerencia em ensembles de pontos quanticos
Experimental measurements were carried out to determine the scales of the relaxation and decoherence time for the electronic spin as quantum bit. The structure of the exciton states was investigated with the objective to serve as intermediate states in the spin manipulation. The system studied for the implementation of the quantum computation is an ensemble
Publicado em: 2007
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4. Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells
The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the
Brazilian Journal of Physics. Publicado em: 2006-09
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5. Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g||-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth directi
Brazilian Journal of Physics. Publicado em: 2006-09
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6. "Spin and magnetic properties of the III-V group semiconductors" / "Propriedades magnéticas e de spin em semicondutores do grupo III-V"
We present the results of our investigations concerning MBE grown AlGaAs/GaAs parabolic quantum well (PQW) samples. We focused on the variation of the Landé g factor along the structure of the PQWs, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The implications are studied by Hall and Shubnikov-de Haas measurements. Sh
Publicado em: 2006
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7. Electron spin-phonon relaxation in quantum dots
We calculate the spin relaxation rates in parabolic quantum dots due to the phonon modulation of the spin-orbit interaction in presence of an external magnetic field. Both, deformation potential (DP) and piezoelectric (PE) electron-phonon couplings are included in the Pavlov-Firsov spin-phonon Hamiltonian. We demonstrate that the spin relaxation rates are pa
Brazilian Journal of Physics. Publicado em: 2004-06