Silicon Based Films
Mostrando 1-12 de 19 artigos, teses e dissertações.
-
1. Carbon based DLC films: Influence of the processing parameters on the structure and properties
ABSTRACT Hydrogenated carbon-based films, such as DLC (“Diamond Like Carbon”), have interesting properties such as excellent tribological behavior, low friction coefficient, high superficial hardness and good wear resistance; they are chemically inert and highly corrosion resistant. They are deposited by means of PACVD (plasma-assisted chemical vapor dep
Matéria (Rio J.). Publicado em: 19/07/2018
-
2. DLC Films Grown On Steel Using An Innovator Active Screen System For PECVD Technique
In this work, an active screen plasma discharge system based technology was incorporated in a PECVD reactor for DLC films growth, making it a new development in DLC films deposition. In this case, the active screen system is used to seek better electrons confinement, which might result in high ions density due to the collisions number increase, leading to a
Mat. Res.. Publicado em: 07/07/2016
-
3. Filmes sensíveis a pressão pela técnica de fotoluminescência. / Pressure sensitive films based on photoluminescence technique.
O presente projeto tem como objetivo contribuir para o desenvolvimento de dispositivos para monitoração de pressão dinâmica do ar. Para isso, foram produzidos filmes sensíveis a pressão baseados na detecção de concentração de oxigênio por meio de processos de emissão fotoluminescente das moléculas de Azul de Metileno (MB) e Platina Octaetilporfi
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 20/05/2011
-
4. Estudo das ressonâncias de plasmon em filmes silicatos com nanopartículas de Ag interagentes
In this work, the behavior of surface plasmon resonance from layers of silver nanoparticles embedded in silicon dioxide or on surfaces of silicon dioxide was studied. Structural properties of the produced films were characterized by transmission electron microscopy, while the optical properties were studied with a spectrophotometer. Results showed average na
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 2011
-
5. Technology roadmap for development of SiC sensors at plasma processes laboratory
Abstract: Recognizing the need to consolidate the research and development (R&D) activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA) has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide
J. Aerosp. Technol. Manag.. Publicado em: 2010-08
-
6. Estudo das propriedades estruturais e ópticas em materiais nanoestruturados a base de silício. / Study of structural and optical properties in nanostructured silicon based films.
The aim of this doctorate thesis is to enhance the knowledge in the research conducted along the Master degree based on the characterization and study of the structural and luminescent properties of silicon rich silicon oxynitride films (SiOxNy:H) deposited at low temperature by Plasma Enhanced Chemical Vapor Deposition (PECVD). The results of this study ind
Publicado em: 2009
-
7. Study of the fabrication steps of an electro-thermo-optical device using Mach-Zehnder interferometer. / Estudo das etapas de fabricação de dispositivos eletro-termo-ópticos utilizando o interferômetro Mach-Zehnder.
In this work, a study of the steps to fabricate an electro-thermo-optical device is realized. This device is based in a Mach-Zehnder interferometer (IMZ) where a micro-resistor is placed in one of the IMZ arms. The Mach-Zehnder interferometer was fabricated using Anti-Resonant Reflecting Optical Waveguide (ARROW) where oxinytride and amorphous hydrogenated s
Publicado em: 2008
-
8. Implementação de sensores ópticos integrados para aplicações em análises químicas e ambientais. / Implementation of integrated optical sensors for chemical analysis and environment aplications.
The aim of this work is the development of optical chemical sensors based on Mach-Zehnder Interferometer (MZI) for chemical and environmental analysis applications. Such devices were implemented with waveguides fabricated on a silicon substrate. The waveguides were obtained using silicon nitride (Si3N4) and silicon oxide (SiO2) films obtained by CVD (Chemica
Publicado em: 2007
-
9. Desenvolvimento de processos de deposição de filmes filmes sobre substratos polimericos fotopolimerizdos / Development of process of deposition of thin films on photopolymerization polymeric substrats
A new era has begun all around the world. The quality of life and health depends more and more on the human capacity of resolving problems that are becoming longer and more complex day by day. As communication and globalization advance, time becomes scarcer and more precious. The semiconductor materials which are used to activate the logical functions, the h
Publicado em: 2007
-
10. Desenvolvimento de micropontas de silício com eletrodos integrados para dispositivos de emissão por efeito de campo. / Development of silicon microtips with integrated electrical contacts for field emission devices.
This work presents a fabrication method of silicon microtips with integrated electrical contacts into the structure. Our motivation is the future development of field emission devices - FED, however our focus in this research is the microstructure fabrication process. This method is based on: (i) anisotropic under-etch method that occurs in the silicon subst
Publicado em: 2007
-
11. Sensores eletroquímicos para detecção de íons e medida de pH baseados em filmes de silício poroso. / Electrochemical sensors to ions detection and pH measure based on porous silicon films.
O presente trabalho foi realizado com o objetivo de contribuir para o desenvolvimento tecnológico de sensores eletroquímicos utilizados na detecção de íons, especificamente, de íons de hidrogênio (H+). Na primeira parte do trabalho é descrito e discutido o estado da arte de sensores eletroquímicos de H+, principalmente de dispositivos sensíveis a �
Publicado em: 2007
-
12. Semiconductor characteristics of Nd doped PbO-Bi2O3-Ga2O3 films
In this work optical and semiconductor characteristics of gallium oxide based thin films are studied. This material has important electro-optic applications and offers possibilities for semiconductor applications in heavy metal oxide semiconductor technology. In this study thin films of PbO-Bi2O3-Ga2O3 were deposited by reactive sputtering. Two targets with
Brazilian Journal of Physics. Publicado em: 2006-06