Silicon Diodes
Mostrando 1-8 de 8 artigos, teses e dissertações.
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1. Desenvolvimento de dosímetros com diodos de Si resistentes à radiação para dosimetria de altas doses / Development of dosimeters with rad-hard silicon diodes for high dose dosimetry
Neste trabalho são apresentados os resultados obtidos com diodos resistentes a danos de radiação dos tipos fusão zonal padrão (FZ), fusão zonaI com difusão de oxigênio (DOFZ) e Czochralski magnético (MCz) em dosimetria de processamento por radiação gama. Estes dispositivos de junção p+-n-n+ foram manufaturados por Okmetic Oyj. (Vantaa, Finland)
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 31/08/2009
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2. Dosimetria de processos de irradiação gama com diodos comerciais de silício / GAMMA RADIATION PROCESSING DOSIMETRY WITH COMMERCIAL SILICON DIODES
This work envisages the development of dosimeters based on Si diodes for gamma radiation dosimetry from 1 Gy up to 100 Gy. This dose range is frequently utilized in radiation processing of crystal modifications, polymers crosslinking and biological studies carried out in the Radiation Technology Center at IPEN-CNEN/SP. The dosimeter was constructed by a comm
Publicado em: 2009
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3. "Factors affecting the energy resolution in alpha particle spectrometry with silicon diodes" / "Fatores que influenciam a resolução em energia na espectrometria de partículas alfa com diodos de Si"
Neste trabalho são apresentados os estudos das condições de resposta de um diodo de Si, com estrutura de múltiplos anéis de guarda, na detecção e espectrometria de partículas alfa. Este diodo foi fabricado por meio do processo de implantação iônica (Al/p+/n/n+/Al) em um substrato de Si do tipo n com resistividade de 3 kohmcm, 300 mícrons de esp
Publicado em: 2005
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4. Electrical characterization of PbTe p-n junctions for applicarion in infrared detectors. / Caracterização elétrica de junções p-n de PbTe para aplicação em detectores de infravermelho.
This work reports on the electrical characterization of PbTe p-n junctions for application in photovoltaic detectors in the medium infrared range. For this purpose, a series of p-n junctions, where the hole concentration p was kept at 1017 cm-3 and the electron concentration n varied between 1017 and 1019 cm-3, was successfully grown by molecular beam epitax
Publicado em: 2004
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5. FabricaÃÃo e caracterizaÃÃo elÃtrica de heterojunÃÃes de polianilina-silÃcio para aplicaÃÃo em dosimetria de radiaÃÃo gama
In this work a technique has been developed to fabricate high quality polyanilinesilicon heterojunction diodes for use as gas and/or ionizing radiation sensors. Polyaniline thin films (40 nm thick) produced by spin-coating on silicon substrates, were the active part of the junction structure. The devices presented excellent reproducibility of their electrica
Publicado em: 2004
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6. A silicon-polymer heterostructure for sensor applications
We report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin films 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at ± 1.0 Volt bias. The de
Brazilian Journal of Physics. Publicado em: 2002-06
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7. ENHANCED DIFFUSION AND ELECTRICAL BEHAVIOR OF MISFIT DISLOCATIONS IN EPITAXIAL Si/Si(Ge)
This dissertation addresses enhanced or \"pipe\" diffusion of dopants along localized misfit dislocations (MD) using a \"model\" misfit dislocation structure at epitaxial Si/Si(Ge) interfaces and provides basic information on the merits of applicability of novel bandgap engineered devices. Pipe diffusion is modeled and explored to create pipe-like one dimens
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 1994
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8. Modelamento, projeto e caracterização de transistores verticais DMOS de potencia e estruturas de alta tensão compativeis com a tecnologia CMOS
The objective of this thesis is to investigate the design viability of power and high-voltage VDMOS transistors, built in a standard CMOS process, usually used for low-voltage applications. Also. the monolithic integration possibility of power VDMOS devices and low voltage logic control circuitry is verified. First of all, follows a discusion on some theoret
Publicado em: 1989